WCMA2008U1X

Features: • High Speed-70ns availability• Voltage range-2.7V3.6V• Ultra low active power-Typical active current: 1 mA @ f = 1MHz-Typical active current: 7 mA @ f = fmax (70ns speed)• Low standby power• Easy memory expansion with CE1,CE2,andOE features• Automatic...

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SeekIC No. : 004545471 Detail

WCMA2008U1X: Features: • High Speed-70ns availability• Voltage range-2.7V3.6V• Ultra low active power-Typical active current: 1 mA @ f = 1MHz-Typical active current: 7 mA @ f = fmax (70ns speed...

floor Price/Ceiling Price

Part Number:
WCMA2008U1X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• High Speed
-70ns availability
• Voltage range
-2.7V3.6V
• Ultra low active power
-Typical active current: 1 mA @ f = 1MHz
-Typical active current: 7 mA @ f = fmax (70ns speed)
• Low standby power
• Easy memory expansion with CE1,CE2,and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power



Specifications

(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature .............................65°C to +150°C
Ambient Temperature with
Power Applied............................................55°C to +125°C
Supply Voltage to Ground Potential..... .........0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[1]....................................0.5V to VCC + 0.5V
DC Input Voltage[1].............................0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................20 mA
Static Discharge Voltage ..........................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ...................................................>200 mA



Description

The WCMA2008U1X is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

The WCMA2008U1X is ideal for portable applications. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling.

The WCMA2008U1X can be put into standby mode reducing power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW).

Writing to the device is accomplished by taking Chip Enable (CE1) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A17).

Reading from the WCMA2008U1X is accomplished by taking Chip Enable (CE1) and Output Enable (OE) LOW while forcing Write Enable (WE) and Chip Enable 2 (CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW and CE2 HIGH and WE LOW).

The WCMA2008U1X is available in a 36-ball FBGA package.




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