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WFP70N06

Features: RDS(on) (Max 0.015 )@VGS=10V Gate Charge (Typical 50nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 60 V ID Continuous Drain Current(@...

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WFP70N06: Features: RDS(on) (Max 0.015 )@VGS=10V Gate Charge (Typical 50nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175)Specifications Symbo...

WFP70N06 Data Sheet

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Part Number:
WFP70N06
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

RDS(on) (Max 0.015 )@VGS=10V
Gate Charge (Typical 50nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (175)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 60 V
ID Continuous Drain Current(@TC = 25) 70 A
Continuous Drain Current(@TC = 100) 48 A
IDM Drain Current Pulsed                  (Note 1) 280 A
VGS Gate to Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy  (Note 2) 756 mJ
EAR Repetitive Avalanche Energy       (Note 1) 16.2 mJ
dv/dt Peak Diode Recovery dv/dt          (Note 3) 7.0 V/ns
PD Total Power Dissipation(@TC = 25 ) 162 W
Derating Factor above 25 1.08 W/
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 175
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.		 300



Description

This Power MOSFET of the WFP70N06 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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