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WFP7N60

Features: ` RDS(on) (Max 1.2 )@VGS=10V` Gate Charge (Typical 28nC)` Improved dv/dt Capability, High Ruggedness` 100% Avalanche Tested` Maximum Junction Temperature Range (150°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V ID Cont...

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SeekIC No. : 004545677 Detail

WFP7N60: Features: ` RDS(on) (Max 1.2 )@VGS=10V` Gate Charge (Typical 28nC)` Improved dv/dt Capability, High Ruggedness` 100% Avalanche Tested` Maximum Junction Temperature Range (150°C)Specifications ...

WFP7N60 Data Sheet

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Part Number:
WFP7N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

` RDS(on) (Max 1.2 )@VGS=10V
` Gate Charge (Typical 28nC)
` Improved dv/dt Capability, High Ruggedness
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)


Specifications

Symbol
 Parameter
Value
Units
VDSS
 Drain to Source Voltage
600
V
ID
 Continuous Drain Current(@TC = 25°C)
7.0
A
Continuous Drain Current(@TC = 100°C)
4.4
A
IDM
 Drain Current Pulsed (Note 1)
28
A
VGS
 Gate to Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy (Note 2)
420
mJ
EAR
 Repetitive Avalanche Energy (Note 1)
14.7
mJ
dv/dt
 Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD
 Total Power Dissipation(@TC = 25 °C)
147
W
Derating Factor above 25 °C
1.18
W/°C
TSTG, TJ
 Operating Junction Temperature & Storage Temperature
- 55 ~ 150
°C
TL
 Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C



Description

This Power MOSFET of the WFP7N60 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices of the WFP7N60 are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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