Position: Home  > All Categories> Integrated Circuits (ICs) > WV3EG32M64ETSU-D3

WV3EG32M64ETSU-D3

Features: · Double-data-rate architecture· PC2700 @ CL 2.5· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2.5 (clock)· Programmable Burst Length (2,4,8)· Programmable Burst type (sequential & interleave)· Edge aligned data output, cent...

product image

WV3EG32M64ETSU-D3 Picture
See larger image
SeekIC No. : 004546963 Detail

WV3EG32M64ETSU-D3: Features: · Double-data-rate architecture· PC2700 @ CL 2.5· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2.5 (clock)· Programmable Burst L...

WV3EG32M64ETSU-D3 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
WV3EG32M64ETSU-D3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Double-data-rate architecture
· PC2700 @ CL 2.5
· Bi-directional data strobes (DQS)
· Differential clock inputs (CK & CK#)
· Programmable Read Latency 2,2.5 (clock)
· Programmable Burst Length (2,4,8)
· Programmable Burst type (sequential & interleave)
· Edge aligned data output, center aligned data input.
· Auto and self refresh, (8K/64ms refresh)
· Serial presence detect with EEPROM
· Power supply:
• VCC = VCCQ = +2.5V ±0.2V
· 184 pin DIMM package
• D3 PCB height: 28.58mm (1.125")
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature optio


Specifications

Parameter Symbol Value Units
Voltage on any pin relative to VSS VIN, VOUT -0.5 to 3.6 V
Voltage on VCC supply relative to VSS VCC -1.0 to 3.6 V
Voltage on VCCQ supply relative to VSS VCCQ -0.5 to 3.6 V
Storage Temperature TSTG -55 to +150
Power Dissipation PD 8 W
Short Circuit Current IOS 50 mA
Note: Permanent device damage may occur if 'ABSOLUTE MAXIMUM RATINGS' are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability


Description

The WV3EG32M64ETSU-D3 is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 32Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin substrate.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the WV3EG32M64ETSU-D3 to be useful for a variety of high bandwidth, high performance memory system applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Resistors
A101G
3006P-1-205LF
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Tapes, Adhesives
803
AC452-2
Circuit Protection
A50QS75-4Y
F-17*77
Audio Products
HUC1002
WM-64CT
Line Protection, Backups
BX0023
A20B-1008-0550
View more