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WV3EG6434S-BD4

Features: * DDR266 and DDR333* Double-data-rate architecture* Bi-directional data strobes (DQS)* Differential clock inputs (CK & CK#)* Programmable Read Latency 2,2.5 (clock)* Programmable Burst Length (2,4,8)* Programmable Burst type (sequential & interleave)* Edge aligned data output, ce...

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SeekIC No. : 004546964 Detail

WV3EG6434S-BD4: Features: * DDR266 and DDR333* Double-data-rate architecture* Bi-directional data strobes (DQS)* Differential clock inputs (CK & CK#)* Programmable Read Latency 2,2.5 (clock)* Programmable Burst...

WV3EG6434S-BD4 Data Sheet

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Part Number:
WV3EG6434S-BD4
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* DDR266 and DDR333
* Double-data-rate architecture
* Bi-directional data strobes (DQS)
* Differential clock inputs (CK & CK#)
* Programmable Read Latency 2,2.5 (clock)
* Programmable Burst Length (2,4,8)
* Programmable Burst type (sequential & interleave)
* Edge aligned data output, center aligned data input
* Auto and self refresh
* Serial presence detect
* Power supply: 2.5V ± 0.20V
* Standard 200 pin SO-DIMM package
• Package height options:BD4: 31.75mm (1.25")


Specifications

Voltage on any pin relative to VSS VIN, VOUT............... -0.5 to 3.6 V
Voltage on VCC supply relative to VSS VCC, VCCQ........ -1.0 to 3.6 V
Storage Temperature TSTG....................................... -55 to +150
Power Dissipation PD ................................................................8 W
Short Circuit Current IOS .......................................................50 mA
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The WV3EG6434S-BD4 is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight 32Mx8 DDR SDRAMs in BGA package mounted on a 200 Pin FR4 substrate.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow the WV3EG6434S-BD4 to be useful for a variety of high bandwidth,high performance memory system applications.




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