XL1001

Features: Balanced DesignExcellent Input/Output MatchSelf-biased Architecture14.0 dB Small Signal Gain2.5 dB Noise Figure100% On-Wafer RF, DC and Noise Figure Testing100% Visual Inspection to MIL-STD-883Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 85 mA I...

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SeekIC No. : 004548395 Detail

XL1001: Features: Balanced DesignExcellent Input/Output MatchSelf-biased Architecture14.0 dB Small Signal Gain2.5 dB Noise Figure100% On-Wafer RF, DC and Noise Figure Testing100% Visual Inspection to MIL-ST...

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Part Number:
XL1001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

Balanced Design
Excellent Input/Output Match
Self-biased Architecture
14.0 dB Small Signal Gain
2.5 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010



Specifications

Supply Voltage (Vd) +6.0 VDC
Supply Current (Id) 85 mA
Input Power (Pin) +15.0dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1

1) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's two stage balanced 17.0-35.0 GHz GaAs MMIC low noise amplifier XL1001 has a small signal gain of 14.0 dB with a noise figure of 2.5 dB across the band. This MMIC XL1001 uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip XL1001 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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