XP133A1330SR

Features:

Low on-state resistance : Rds (on) = 0.03 ( Vgs = 4.5V )
                                           Rds (on) = 0.04 ( Vgs = 2.5V )
                                           Rds (on) = 0.07 ( Vgs = 1.5V )
Ultra high-speed switching
Operational Voltage : 1.5V
High density mounting : SOP - 8


Application

􀀀Notebook PCs
􀀀Cellular and portable phones
􀀀On - board power supplies
􀀀Li - ion battery systems


Pinout




Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain-Source Voltage	Vdss	20	V
Gate-Source Voltage	Vgss	±8	V
Drain Current (DC)	Id	6	A
Drain Current (Pulse)	Idp	20	A
Reverse Drain Current	Idr	6	A
Continuous Channel Power Dissipation (note)	Pd	2	W
Channel Temperature	Tch	150
Storage Temperature	Tstg	-55~150

Description

The XP133A1330SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Two FET XP133A1330SR are built into the one package.

Because high-speed switching is possible, the XP133A1330SR can be efficiently set thereby saving energy.

The small SOP-8 package of XP133A1330SR makes high density mounting possible.