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XP134A11A1SR

Features: ` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V) :Rds(on)=0.11(Vgs=-4.5V)` Ultra High-Speed Switching` Driving Voltage : -4.5V` P-Channel Power MOSFET` DMOS Structure` Two FET Devices Built-in` Package : SOP-8ApplicationNotebook PCsCellular and portable phonesOn-board power suppliesLi-...

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XP134A11A1SR: Features: ` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V) :Rds(on)=0.11(Vgs=-4.5V)` Ultra High-Speed Switching` Driving Voltage : -4.5V` P-Channel Power MOSFET` DMOS Structure` Two FET Devices Bu...

XP134A11A1SR Data Sheet

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Part Number:
XP134A11A1SR
Supply Ability:
5000

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Product Details

Description



Features:

` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V)
                                           :Rds(on)=0.11(Vgs=-4.5V)
` Ultra High-Speed Switching
` Driving Voltage : -4.5V
` P-Channel Power MOSFET
` DMOS Structure
` Two FET Devices Built-in
` Package : SOP-8


Application

Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage

Gate-Source Voltage		 Vdss

Vgss		 -30

±20		 V

V
Drain Current (DC)

Drain Current (Pulse)		 Id

Idp		 -4

-16		 A

A
Reverse Drain Current

Channel Power Dissipation *		 Idr

Pd		 -4

2		 A

W
Channel Temperature

Storage Temperature Range		 Tch

Tstg		 150

-55~150


* When implemented on a glass epoxy PCB


Description

The XP134A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics Two FET devices are built into the one package.

Because high-speed switching is possible, the XP134A11A1SR can be efficiently set thereby saving energy.

The small SOP-8 package of XP134A11A1SR makes high density mounting possible.




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