XP151A12A2MR -

      Here is the description about XP151A12A2MR - of the Power MOSFET. The XP151A12A2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
      Here are the features. Low On-State Resistance : Rds(on) = 0.1@ Vgs = 4.5V and Rds(on) = 0.16@ Vgs = 2.5V; Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V; N-Channel Power MOSFET DMOS Structure Small Package : SOT-23.
      Here are its maximum ratings. Drain - Source Voltage is 20V. Gate - Source Voltage is ±12V. Drain Current (DC) is 1A. Drain Current (Pulse) is 4A. Reverse Drain Current is 1A. Channel Power Dissipation is 0.5W. Channel Temperature is 150 . Storage Temperature Range is from -55 to 150.
      And here are the Electrical Characteristics of XP151A12A2MR -(Ta =25°C). Drain Cut-Off Current is from min to 10A. Gate-Source Leak Current is ±10A. Gate-Source Cut-Off Voltage is from 0.7 to 1.4V. Drain-Source On-State Resistance *1 (Id= 0.5A, Vgs= 4.5V) is from min to 0.1 and (Id= 0.5A, Vgs= 2.5V) is from min to 0.160. Forward Transfer Admittance *1 is unknown S Body Drain Diode Forward Voltage is from min to 1.1V.
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