XP162A11COPR

Features: `Low on-state resistance : Rds (on) = 0.15 ( Vgs = -10V ) Rds (on) = 0.28 ( Vgs = -4.5V )`Ultra high-speed switching`Operational Voltage : -4.5V`Gate protect diode built-in`High density mounting : SOT - 89Application·Notebook PCs·Cellular and portable phones·On - board power supplies·Li ...

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XP162A11COPR Picture
SeekIC No. : 004549011 Detail

XP162A11COPR: Features: `Low on-state resistance : Rds (on) = 0.15 ( Vgs = -10V ) Rds (on) = 0.28 ( Vgs = -4.5V )`Ultra high-speed switching`Operational Voltage : -4.5V`Gate protect diode built-in`High density mo...

floor Price/Ceiling Price

Part Number:
XP162A11COPR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

`Low on-state resistance : Rds (on) = 0.15 ( Vgs = -10V ) Rds (on) = 0.28 ( Vgs = -4.5V )
`Ultra high-speed switching
`Operational Voltage : -4.5V
`Gate protect diode built-in
`High density mounting : SOT - 89



Application

·Notebook PCs
·Cellular and portable phones
·On - board power supplies
·Li - ion battery systems

 




Pinout

  Connection Diagram


Specifications

PARAMETER
SYMBOL
RATINGS
UNITS
Drain - Source Voltage 
Gate - Source Voltage 
Drain Current (DC) 
Drain Current (Pulse) 
Storage Temperature 
Reverse Drain Current 
Continuous Channel 
Power Dissipation (note) 
Channel Temperature
Vdss
Vgss
Id
Idp
Idr
Pd

Tch
Tstg
-30V 
+ 20V 
-2.5 
-10A 
-2.5 
2 

150 
-55 to 150
V 
V 
A 
A 
A 
W 

 
( note ) : When implemented on a ceramic PCB


Description

The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible.




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