XQR4036XL

Features: • Radiation-hardened FPGAs for space and satellite applications• Guaranteed total ionizing dose• Latch-up immune• Low soft upset rate• Guaranteed to meet full electrical specifications over 55°C to +125°C• Available in -3 speed• System featured F...

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XQR4036XL: Features: • Radiation-hardened FPGAs for space and satellite applications• Guaranteed total ionizing dose• Latch-up immune• Low soft upset rate• Guaranteed to meet full...

floor Price/Ceiling Price

Part Number:
XQR4036XL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Description



Features:

• Radiation-hardened FPGAs for space and satellite applications
• Guaranteed total ionizing dose
• Latch-up immune
• Low soft upset rate
• Guaranteed to meet full electrical specifications over
   55°C to +125°C
• Available in -3 speed
• System featured FPGAs
   - SelectRAM™ memory: on-chip ultra-fast RAM with
      ` synchronous write option
      ` dual-port RAM option
   - Abundant flip-flops
   - Flexible function generators
   - Dedicated high-speed carry logic
   - Wide edge decoders on each edge
   - Hierarchy of interconnect lines
   - Internal 3-state bus capability
   - Eight global low-skew clock or signal distribution networks
• System performance beyond 60 MHz
• Flexible array architecture
• Low power segmented routing architecture
• Systems-oriented features
   - IEEE 1149.1-compatible boundary scan logic support
   - Individually programmable output slew rate
   - Programmable input pull-up or pull-down resistors
   - 12 mA sink current per output
• Configured by loading binary file
   - Unlimited reprogrammability
• Readback capability
   - Program verification
   - Internal node observability
• Development system runs on most common computer platforms
   - Interfaces to popular design environments
   - Fully automatic mapping, placement and routing
   - Interactive design editor for design optimization
• Highest capacity: over 130,000 usable gates
• Buffered interconnect for maximum speed
• New latch capability in configurable logic blocks
• Improved VersaRing™ I/O interconnect for better fixed pinout flexibility
   Virtually unlimited number of clock signals
• Optional multiplexer or 2-input function generator on device outputs
• 5V tolerant I/Os
• Advanced 0.35 process
• Processed on Xilinx QML line



Specifications

Symbol Description
Value
Unit
Vcc Supply voltage relative to GND
0.5 to +4.0
V
VIN Input voltage with respect to GND(2)
0.5 to +5.5
V
VTS Voltage applied to High-Z output(2)
0.5 to +5.5
V
VCCT Longest supply voltage rise time from 1V to 3V
50
ms
TSTG Storage temperature (ambient)
-65 to +150
TSOL Maximum soldering temperature (10s @ 1/16 in. = 1.5 mm)
+260
TJ Junction Temperature
+150

Except for pin-to-pin input and output parameters, the a.c. parameter delay specifications included in this document are derived from measuring internal test patterns. All specifications are representative of worst-case supply voltage and junction temperature conditions. The parameters included are common to popular designs and typical applications. For design considerations requiring more detailed timing information, see the appropriate family AC supplements available on the Xilinx web site at: http://www.xilinx.com/partinfo/databook.htm.

Notes:
1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time may affect device reliability.
2. Maximum DC overshoot or undershoot above VCC or below GND must be limited to either 0.5V or 10 mA, whichever is easier to achieve. During transitions, the device pins may undershoot to 2.0 V or overshoot to VCC +2.0V,provided this over- or undershoot lasts less than 10 ns and with the forcing current being limited to 200 mA.




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