XR1007

Features: ·Fully Integrated Design·2.2 dB Noise Figure·13.5 dB Conversion Gain·20 dB Image Rejection·+4 dBm IIP3·+3 dBm LO drive Level·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspection to MIL-STD-883 Method 2010SpecificationsSupply Voltage (Vd)...........+6.0 VDCSupply Current (...

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SeekIC No. : 004549139 Detail

XR1007: Features: ·Fully Integrated Design·2.2 dB Noise Figure·13.5 dB Conversion Gain·20 dB Image Rejection·+4 dBm IIP3·+3 dBm LO drive Level·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspe...

floor Price/Ceiling Price

Part Number:
XR1007
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

·Fully Integrated Design
·2.2 dB Noise Figure
·13.5 dB Conversion Gain
·20 dB Image Rejection
·+4 dBm IIP3
·+3 dBm LO drive Level
·100% On-Wafer RF, DC and Noise Figure Testing
·100% Visual Inspection to MIL-STD-883 Method 2010



Specifications

Supply Voltage (Vd)...........+6.0 VDC
Supply Current (Id1), (Id3)......250, 200 mA
Gate Bias Voltage (Vg)..........+0.3 VDC
Input Power (RF Pin)...........+17 dBm
Storage Temperature (Tstg).... -65 to +165
Operating Temperature (Ta)..-55 to MTTF Table3
Channel Temperature (Tch)......MTTF Table3

(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.





Description

XR1007 Mimix Broadband's 11.0-17.0 GHz GaAs MMIC receiver has a noise figure of 2.2 dB and 20.0 dB image rejection across the band. This XR1007 is a three stage LNA followed by an image reject resistive pHEMT mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XR1007 chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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