Features: ·Fully Integrated Design·2.2 dB Noise Figure·13.5 dB Conversion Gain·20 dB Image Rejection·+4 dBm IIP3·+3 dBm LO drive Level·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspection to MIL-STD-883 Method 2010SpecificationsSupply Voltage (Vd)...........+6.0 VDCSupply Current (...
XR1007: Features: ·Fully Integrated Design·2.2 dB Noise Figure·13.5 dB Conversion Gain·20 dB Image Rejection·+4 dBm IIP3·+3 dBm LO drive Level·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspe...
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XR1007 Mimix Broadband's 11.0-17.0 GHz GaAs MMIC receiver has a noise figure of 2.2 dB and 20.0 dB image rejection across the band. This XR1007 is a three stage LNA followed by an image reject resistive pHEMT mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XR1007 chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.