YTA640

MOSFET N-CH 200V 15A TO-220AB

product image

YTA640 Picture
SeekIC No. : 003432732 Detail

YTA640: MOSFET N-CH 200V 15A TO-220AB

floor Price/Ceiling Price

Part Number:
YTA640
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/17

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 15A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) @ Vgs: 40nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2000pF @ 10V
Power - Max: 80W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 200V
Gate Charge (Qg) @ Vgs: 40nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 15A
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Input Capacitance (Ciss) @ Vds: 2000pF @ 10V
Power - Max: 80W
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V


Parameters:

Technical/Catalog InformationYTA640
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs180 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 2000pF @ 10V
Power - Max80W
PackagingTube
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names YTA640
YTA640



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Hardware, Fasteners, Accessories
Static Control, ESD, Clean Room Products
Isolators
Test Equipment
Cables, Wires - Management
View more