ZNBG2001

Features: • Provides bias for GaAs and HEMT FETs• Drives up to two FETs• Dynamic FET protection• Drain current set by external resistor• Regulated negative rail generator requires only 2 external capacitors• Choice in drain voltage• Wide supply voltage ran...

product image

ZNBG2001 Picture
SeekIC No. : 004551745 Detail

ZNBG2001: Features: • Provides bias for GaAs and HEMT FETs• Drives up to two FETs• Dynamic FET protection• Drain current set by external resistor• Regulated negative rail generat...

floor Price/Ceiling Price

Part Number:
ZNBG2001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2022/6/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Provides bias for GaAs and HEMT FETs
• Drives up to two FETs
• Dynamic FET protection
• Drain current set by external resistor
• Regulated negative rail generator requires only 2 external capacitors
• Choice in drain voltage
• Wide supply voltage range
• MSOP surface mount package



Application

• Satellite receiver LNBs
• Private mobile radio (PMR)
• Single in single out C Band LNB
• Cellular telephones



Pinout

  Connection Diagram


Specifications

Supply Voltage -0.6V to 15V
Supply Current 100mA
Drain Current (per FET)(set by RCAL1 and RCAL2) 0 to 15mA
Output Current 100mA
Operating Temperature -40 to 80
Storage Temperature -40 to 85
Power Dissipation (Tamb 25)MSOP10 500mW



Description

The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.

With the addition of two capacitors and a resistor the  ZNBG series  devices provide drain voltage and current control for 2 external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply.This negative bias, at -3 volts, can also be used to supply other external circuits. The ZNBG2000/1 contains two bias stages. A single resistor allows FET drain current to be set to the desired level. The series also offers the choice of drain voltage to be set for the FETs, the ZNBG2000 gives 2.2 volts drain whilst the ZNBG2001 gives 2 volts.

These  ZNBG series  devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the recommended gate and drain capacitors. These ensure RF stability and minimal injected noise. complement of FET bias controls, unused drain and gate connections can be left open circuit without affecting operation of the remaining bias circuits.

In order to protect the external FETs  ZNBG series  circuits have been designed to ensure that, under any conditions including power up/down transients, the gate drive from the bias circuits cannot exceed the range -3.5V to 0.7V. Furthermore if the negative rail experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will shut down avoiding excessive current flow. The ZNBG2000/1 are available in MSOP10 packages for the minimum in devices size. Device operating temerature is -40 to 80°C to suit a wide range of environmental conditions.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cable Assemblies
Power Supplies - Board Mount
Hardware, Fasteners, Accessories
LED Products
Resistors
View more