Features: • Provides bias for GaAs and HEMT FETs• Drives up to two FETs• Dynamic FET protection• Drain current set by external resistor• Regulated negative rail generator requires only 2 external capacitors• Choice in drain voltage• Wide supply voltage ran...

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SeekIC No. : 004551744 Detail

ZNBG2000: Features: • Provides bias for GaAs and HEMT FETs• Drives up to two FETs• Dynamic FET protection• Drain current set by external resistor• Regulated negative rail generat...

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Upload time: 2022/6/27

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Product Details



• Provides bias for GaAs and HEMT FETs
• Drives up to two FETs
• Dynamic FET protection
• Drain current set by external resistor
• Regulated negative rail generator requires only 2 external capacitors
• Choice in drain voltage
• Wide supply voltage range
• MSOP surface mount package


• Satellite receiver LNBs
• Private mobile radio (PMR)
• Single in single out C Band LNB
• Cellular telephones



Supply Voltage -0.6V to 15V
Supply Current 100mA
Drain Current (per FET)(set by RCAL1 and RCAL2) 0 to 15mA
Output Current 100mA
Operating Temperature -40 to 80
Storage Temperature -40 to 85
Power Dissipation (Tamb 25)MSOP10 500mW


The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.

With the addition of two capacitors and a resistor the ZNBG series  devices provide drain voltage and current control for 2 external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits.

The ZNBG2000/1 contains two bias stages. A single resistor allows FET drain current to be set to the desired level. The series also offers the choice of drain voltage to be set for the FETs, the ZNBG2000 gives 2.2 volts drain whilst the ZNBG2001 gives 2 volts. These ZNBG series  devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the recommended gate and drain capacitors. These ensure RF stability and minimal injected noise. complement of FET bias controls, unused drain and gate connections can be left open circuit without affecting operation of the remaining bias circuits.

In order to protect the external FETs the ZNBG series  circuits have been designed to ensure that, under any conditions including power up/down transients, the gate drive from the bias circuits cannot exceed the range -3.5V to 0.7V. Furthermore if the negative rail experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will shut down avoiding excessive current flow.The ZNBG2000/1 are available in MSOP10 packagesfor the minimum in devices size. Device operating temerature is -40 to 80°C to suit a wide range of environmental conditions.

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