ZTX853

Transistors Bipolar (BJT) NPN Medium Power

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ZTX853 Picture
SeekIC No. : 00206186 Detail

ZTX853: Transistors Bipolar (BJT) NPN Medium Power

floor Price/Ceiling Price

US $ .35~.65 / Piece | Get Latest Price
Part Number:
ZTX853
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.65
  • $.58
  • $.4
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Month Sales

268 Transactions

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 4 A
Configuration : Single Maximum Operating Frequency : 130 MHz
Maximum Operating Temperature : + 200 C Mounting Style : Through Hole
Package / Case : E-Line Packaging : Bulk    

Description

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Maximum DC Collector Current : 4 A
Maximum Operating Temperature : + 200 C
Maximum Operating Frequency : 130 MHz
Packaging : Bulk
Package / Case : E-Line


Features:

* 100 Volt VCEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* Ptot=1.2 Watts




Specifications

PARAMETER

SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
Ptotp
Ptot
Tj:Tstg
200
100
6
10
4
1.58
1.2
-55 to +200
V
V
V
A
A
W
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum




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