ZTX953

Transistors Bipolar (BJT) PNP Big Chip SELine

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SeekIC No. : 00206380 Detail

ZTX953: Transistors Bipolar (BJT) PNP Big Chip SELine

floor Price/Ceiling Price

US $ .46~.66 / Piece | Get Latest Price
Part Number:
ZTX953
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.66
  • $.54
  • $.52
  • $.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 3.5 A
Configuration : Single Maximum Operating Frequency : 125 MHz
Maximum Operating Temperature : + 200 C Mounting Style : Through Hole
Package / Case : E-Line Packaging : Bulk    

Description

DC Collector/Base Gain hfe Min :
Configuration : Single
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Maximum Operating Temperature : + 200 C
Packaging : Bulk
Maximum Operating Frequency : 125 MHz
Package / Case : E-Line
Maximum DC Collector Current : 3.5 A


Features:

* 3.5 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* Excellent gain up to 10 Amps
* Spice model available





Specifications

PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-140
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-10
A
Continuous Collector Current
IC
-3.5
mA
Practical Power Dissipation *
PtotP
1.58
W
Power Dissipation at Tamb=25°C
Ptot
1.2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum

Part Number ZTX953
Product Type PNP
VCEO (V) -100
IC (A) -3.5
ICM (A) -10
PD (W) 1.2
hFE Min 100
30
hFE Max 300
@ IC (A) -1
-4
VCE (SAT) Max (mV) -100
-330
@ IC (A) -1
-4
@ IB (mA) -100
-400
fT Min (MHz) 125
RCE (SAT) (m) -





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