MOSFET P-Chnl 100V
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.14 A | ||
| Resistance Drain-Source RDS (on) : | 20000 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | E-Line | Packaging : | Bulk |
| PARAMETER |
SYMBOL |
VALUE |
UNIT |
| Drain-Source Voltage |
VDS |
-100 |
V |
| Continuous Drain Current at Tamb=25°C |
ID |
-140 |
mA |
| Pulsed Drain Current |
IDM |
-1.0 |
A |
| Gate Source Voltage |
VGS |
±20 |
V |
| Power Dissipation at Tamb=25°C |
Ptot |
625 |
W |
| Operating and Storage Temperature Range |
Tj,Tstg |
-55 to +150 |
°C |
| Part Number | ZVP3310A |
| Config/ Polarity |
P |
| PD (W) |
0.625 |
| VDSS (V) |
-100 |
| VGSS (+/-) (V) |
20 |
| ID (A) |
-0.14 |
| RDS (on) Max() @ VGS; -3.5V | - |
| RDS (on) Max() @ VGS; -6V | - |
| RDS (on) Max() @ VGS; -10.0V | 20 |
| VGS(th) (V) |
-3.5 |
| Ciss (typ) (pF) |
50(Max) |
| Qg (typ) (nC) @ VGS; 10V |
- |