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ZX3CD3S1M832

Features: • Extremely Low Saturation Voltage (-220mV @-1A)• HFE characterised up to -3A• IC = -3A Continuous Collector Current• Extremely Low VF, fast switching Schottky• 3mm x 2mm MLPApplication• DC - DC Converters• Mobile Phones• Charging Circuits&...

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ZX3CD3S1M832: Features: • Extremely Low Saturation Voltage (-220mV @-1A)• HFE characterised up to -3A• IC = -3A Continuous Collector Current• Extremely Low VF, fast switching Schottky̶...

ZX3CD3S1M832 Data Sheet

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Part Number:
ZX3CD3S1M832
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extremely Low Saturation Voltage (-220mV @-1A)
• HFE characterised up to -3A
• IC = -3A Continuous Collector Current
• Extremely Low VF, fast switching Schottky
• 3mm x 2mm MLP





Application

• DC - DC Converters
• Mobile Phones
• Charging Circuits
• Motor control





Pinout

Connection Diagram




Specifications

Part Number ZX3CD3S1M832
Product Type PNP + Schottky
VCEO(V) -40
40
IC(A) -3
1.85
ICM (A) -4
PD (W) 1.5
1.2
hFE Min 300
@ IC (A) -0.1
VCE (SAT) Max (mV) -220
@ IC (A) -1
@ IB (mA) -50
VFMax (V) -
0.5
@ IF(A) -
1
RCE(sat) (m) 104
Spicemodel


PARAMETER
SYMBOL
VALUE
UNIT
Transistor
Collector-Base voltage
VCBO
-50
V
Collector-Emitter voltage
VCEO
-40
V
Emitter-Base voltage
VEBO
-7.5
V
Peak Pulse Current
ICM
-4
A
Continuous Collector Current (a)(f)
IC
-3
A
Base Current
IB
1000
mA
Power Dissipation at TA=25 (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/
Power Dissipation at TA=25 (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/
Power Dissipation at TA=25 (c)(f)
Linear Derating Factor
PD
1
8
W
mW/
Power Dissipation at TA=25 (d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/

Power DLinear Derating Factor
Lissipation at TA=25 (d)(g)
PD
1.7
13.6
W
mW/
Power Dissipation at TA=25 (e)(g)
Linear Derating Factor
PD
3
24
W
mW/
Storage Temperature Range
Tstg
-55 to +150
Junction Temperature
Tj
150





Description

Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky barrier diode. This excellent combination ZX3CD3S1M832  provides users with highly efficient performance in applications including DC-DC and charging circuits.






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