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ZXM64P035L3

MOSFET 35V P-Chnl

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SeekIC No. : 00150678 Detail

ZXM64P035L3: MOSFET 35V P-Chnl

ZXM64P035L3 Data Sheet

floor Price/Ceiling Price

US $ .61~1.08 / Piece | Get Latest Price
Part Number:
ZXM64P035L3
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.08
  • $.97
  • $.7
  • $.61
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 35 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 75 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 75 mOhms
Drain-Source Breakdown Voltage : 35 V


Features:

· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· TO220 package




Application

·100W Class D Audio Output Stage
· Motor Control




Pinout

Connection Diagram




Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -35 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
 ID -12
-3.3		 A
Pulsed Drain Current (c) IDM -19 A
Continuous Source Current (Body Diode) (b) IS -2.3 A
Pulsed source current (body diode) (c) ISM -19 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor		 PD 20
160		 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor		 PD 1.5
12		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C


Part Number ZXM64P035L3
Config/
Polarity		 P
PD
(W)		 1.5
VDSS
(V)		 -35
VGSS (+/-)
(V)		 20
ID
(A)		 -3.3
RDS(on) Max() @ VGS; -2.5V -
RDS(on) Max() @ VGS; 4.0V -
RDS(on) Max() @ VGS; -4.5V 0.105
RDS(on) Max() @ VGS; -5V -
RDS(on) Max() @ VGS; -10V 0.075
VGS(th)
(V)		 -1.0(Min)
Ciss (typ)
(pF)		 825
Qg (typ) (nC)
@ VGS; 10V		 46 (max)





Description

This new generation of high cell density planar MOSFETs ZXM64P035L3from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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