ZXMC10A816N8TC

MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE

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SeekIC No. : 00152332 Detail

ZXMC10A816N8TC: MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE

floor Price/Ceiling Price

US $ .39~.64 / Piece | Get Latest Price
Part Number:
ZXMC10A816N8TC
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.64
  • $.57
  • $.45
  • $.39
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/2/27

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.1 A at N Channel, 2.2 A at P Channel
Resistance Drain-Source RDS (on) : 230 mOhms at N Channel, 235 mOhms at P Channel Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SO
Continuous Drain Current : 2.1 A at N Channel, 2.2 A at P Channel
Resistance Drain-Source RDS (on) : 230 mOhms at N Channel, 235 mOhms at P Channel


Parameters:

Technical/Catalog InformationZXMC10A816N8TC
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs230 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 497pF @ 50V
Power - Max1.8W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9.2nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ZXMC10A816N8TC
ZXMC10A816N8TC
ZXMC10A816N8DITR ND
ZXMC10A816N8DITRND
ZXMC10A816N8DITR



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