Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor Drive• LCD backlightingPinoutSpecifications Part Number ZXMC3A16DN8 Config/Polarity N+P PD(W) 2.1 VDSS (V) 3...
ZXMC3A16DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor Drive• LCD backlightingPinout...
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Specifications Part Number ZXMC10A816N8 Config/Polarity N+P PD(W) 2.42.6 VDSS (V) ...
Part Number | ZXMC3A16DN8 |
Config/ Polarity |
N+P |
PD (W) |
2.1 |
VDSS (V) |
30 -30 |
VGSS (+/-) (V) |
20 20 |
ID (A) |
6.4 -5.4 |
RDS (on) Max () @ VGS 1.8V | - |
RDS (on) Max () @ VGS 2.5V | - |
RDS (on) Max () @ VGS 4.5V | 0.05 0.07 |
RDS (on) Max () @ VGS 5V | |
RDS (on) Max () @ VGS 10.0V | 0.035 0.048 |
VGS(th) (V) |
1 -1 |
Ciss (typ) (pF) |
796 |
Qg (typ) (nC) @ VGS 10V |
17.5 |
PARAMETER | SYMBOL | N-Channel | P-Channel | UNIT |
Drain-Source Voltage | VDSS | 30 | -30 | V |
Gate Source Voltage | VGS | ± 20 | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) |
ID | 6.4 5.1 4.9 |
-5.4 -4.3 -4.1 |
A |
Pulsed Drain Current (c) | IDM | 30 | -25 | A |
Continuous Source Current (Body Diode) (b) | IS | 3.4 | -3.2 | A |
Pulsed source current (body diode) (c) | ISM | 30 | -25 | A |
Power Dissipation at TA=25°C (a)(d) Linear Derating Factor |
PD | 1.25 10 |
W mW/°C | |
Power Dissipation at TA=25°C (a)(e) Linear Derating Factor |
PD | 1.8 14 |
W mW/°C | |
Power Dissipation at TA=25°C (b)(d) Linear Derating Factor |
PD | 2.1 17 |
W mW/°C | |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of trench MOSFETs ZXMC3A16DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.