ZXMN10A08DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC converters• Power management functions• Disconnect switches• Motor controlSpecifications PARAMETER SYMBO...

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ZXMN10A08DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC converters• Power managemen...

floor Price/Ceiling Price

Part Number:
ZXMN10A08DN8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package





Application

• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control





Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
VDSS
100
V
Gate source voltage
VGS
20
V
Continuous drain current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
ID
2.1
1.7
1.6
A
Pulsed drain current (c)
IDM
9
A
Continuous source current (body diode) (b)
IS
2.6
A
Pulsed source current (body diode) (c)
ISM
9
A
Power dissipation at TA=25°C (a)
Linear derating factor
PD
1.25
10
W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor
PD
1.8
14.5
W
mW/°C
Operating and storage temperature range
Tj:Tstg
-55 to +150
°C





Description

This new generation of TRENCH MOSFETsZXMN10A08DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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