MOSFET 100V 2.1A N-Channel Enhancement MOSFET
ZXMN10A08DN8TA: MOSFET 100V 2.1A N-Channel Enhancement MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.1 A | ||
| Resistance Drain-Source RDS (on) : | 250 mOhms | Configuration : | Dual Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 | Packaging : | Reel |