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ZXMN2088DE6

Features: •Low on-resistance•Low gate drive capability•SOT23-6 (dual) packageApplication•Power Management functions•Disconnect switches•Relay driving and load switchingPinoutSpecifications Parameter Symbol VALUE UNIT Drain to Source Voltage VDSS 20...

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ZXMN2088DE6: Features: •Low on-resistance•Low gate drive capability•SOT23-6 (dual) packageApplication•Power Management functions•Disconnect switches•Relay driving and load swi...

ZXMN2088DE6 Data Sheet

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Part Number:
ZXMN2088DE6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•Low on-resistance
•Low gate drive capability
•SOT23-6 (dual) package


Application

•Power Management functions
•Disconnect switches
•Relay driving and load switching


Pinout

Connection Diagram


Specifications

Parameter Symbol VALUE UNIT
Drain to Source Voltage VDSS 20 V
Gate to Source Voltage VGS ± 8 V
Continuous Drain current @ VGS= 4.5V; TA=25°C (b) (d)
@ VGS= 4.5V; TA=70°C (b) (d)
@ VGS= 4.5V; TA=25°C (a) (d)		 ID 2.1
1.7
1.7		 A
Pulsed drain current IDM 8 A
Power dissipation at TA =25°C (a) (d)
Linear derating factor		 PD 0.9
7.2		 W
mW/°C
Power dissipation at TA =25°C (a) (e)
Linear derating factor		 PD 1.1
8.8		 W
mW/°C
Power dissipation at TA =25°C (b) (d)
Linear derating factor		 PD 1.3
10.4		 W
mW/°C
Operating and storage temperature range Tj,Tstg -55 to +150
NOTES:
(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)As above measured at t 5 sec.
(c)Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us pulse width limited by maximum junction temperature.
(d)For device with one active die
(e)For device with two active die running at equal power.


Description

This new generation dual n-channel trench MOSFETZXMN2088DE6  from Zetex features low on-resistance achievable with low gate drive.


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