Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications Part Number ZXMN2A01E6...
ZXMN2A01E6: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23-6 packageApplication• DC - DC Converters• Power Management Functio...
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| Part Number | ZXMN2A01E6 |
| Config/ Polarity |
N |
| PD (W) |
1.7 |
| VDSS (V) |
20 |
| VGSS (+/-) (V) |
12 |
| ID (A) |
3 |
| RDS(on) Max() @ VGS; 1.5V | |
| RDS(on) Max() @ VGS; 1.8V | |
| RDS(on) Max() @ VGS; 2.5V | 0.225 |
| RDS(on) Max() @ VGS; 2.7V | |
| RDS(on) Max() @ VGS; 4.0V | |
| RDS(on) Max() @ VGS; 4.5V | 0.12 |
| RDS(on) Max() @ VGS; 10.0V | |
| VGS(th) (V) |
0.7 |
| Ciss (typ) (pF) |
299 |
| Qg (typ) (nC) @ VGS; 4.5V |
3 |
| Qg (typ) (nC) @ VGS; 10V |
| PARAMETER | SYMBOL | LIMIT | UNIT |
| Drain-Source Voltage | VDSS | 20 | V |
| Gate Source Voltage | VGS | 12 | V |
| Continuous Drain Current VGS=4.5V; TA=25°C(b) VGS=4.5V; TA=70°C(b) VGS=4.5V; TA=25°C(a) |
ID | 3.03 2.43 2.44 |
A |
| Pulsed Drain Current (c) | IDM | 10 | A |
| Continuous Source Current (Body Diode) (b) | IS | 1.8 | A |
| Pulsed Source Current (Body Diode)(c) | ISM | 10 | A |
| Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1.1 8.8 |
W mW/°C |
| Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.7 13.6 |
W mW/°C |
| Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of TRENCH MOSFETs ZXMN2A01E6 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.