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ZXMN2A04DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications Part Number Z...

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ZXMN2A04DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...

ZXMN2A04DN8 Data Sheet

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Part Number:
ZXMN2A04DN8
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package




Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control




Pinout

Connection Diagram




Specifications

Part Number ZXMN2A04DN8
Config/
Polarity		 2 x N
PD
(W)		 2.1
VDSS
(V)		 20
VGSS
(+/-)
(V)		 12
ID
(A)		 7.7
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V 0.035
RDS(on) Max() @ VGS; 2.7V
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.025
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)		 0.7
Ciss (typ)
(pF)		 1880
Qg (typ) (nC)
@ VGS; 4.5V		 40.5
Qg (typ) (nC)
@ VGS; 10V


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=10V; TA=25°C (b)(d)
VGS=10V; TA=70°C (b)(d)
VGS=10V; TA=25°C (b)(d)
 ID 6.8
5.4
5.2		 A
Pulsed Drain Current (c) IDM 23 A
Continuous Source Current (Body Diode) (b) IS 12 A
Pulsed source current (body diode) (c) ISM 23 A
Power Dissipation at TA=25°C (a) (d)
Linear Derating Factor		 PD 1.25
10		 W
mW/°C
Power Dissipation at TA=25°C (a) (e)
Linear Derating Factor		 PD 1.8
14		 W
mW/°C
Power Dissipation at TA=25°C (b) (d)
Linear Derating Factor		 PD 2.1
17		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of TRENCH MOSFETs ZXMN2A04DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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