ZXMN2A14F

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC-DC Converters• Power Management functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UN...

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SeekIC No. : 004552479 Detail

ZXMN2A14F: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC-DC Converters• Power Management functions&#...

floor Price/Ceiling Price

Part Number:
ZXMN2A14F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package





Application

• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control





Pinout

  Connection Diagram




Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -20 V
Gate Source Voltage VGS ± 20 V
Continuous Drain Current VGS=4.5V; TA=25°C(b)
VGS=4.5V; TA=70°C(b)
VGS=4.5V; TA=25°C(b)
ID 4.1
3.3
3.4
A
Pulsed Drain Current (c) IDM 19 A
Continuous Source Current (Body Diode) (b) IS 1.7 A
Pulsed source current (body diode) (c) ISM 19 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD 1
8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD 1.5
12
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C


Part Number ZXMN2A14F
Config/
Polarity
N
PD
(W)
1
VDSS
(V)
20
VGSS
(+/-)
(V)
12
ID
(A)
4.1
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V 0.11
RDS(on) Max() @ VGS; 2.7V
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.06
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)
0.7
Ciss (typ)
(pF)
544
Qg (typ) (nC)
@ VGS; 4.5V
6.6
Qg (typ) (nC)
@ VGS; 10V





Description

This new generation of Trench MOSFETsZXMN2A14F from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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