ZXMN2AM832

Features: • Low On - Resistance• Fast switching speed• Low threshold• Low gate drive• 3mm x 2mm MLPApplication• DC-DC Converters• Power Management Functions• Disconnection switches• Motor ControlPinoutSpecifications Part Number ZXMN2AM83...

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SeekIC No. : 004552480 Detail

ZXMN2AM832: Features: • Low On - Resistance• Fast switching speed• Low threshold• Low gate drive• 3mm x 2mm MLPApplication• DC-DC Converters• Power Management Functions...

floor Price/Ceiling Price

Part Number:
ZXMN2AM832
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• Low On - Resistance
• Fast switching speed
• Low threshold
• Low gate drive
• 3mm x 2mm MLP





Application

• DC-DC Converters
• Power Management Functions
• Disconnection switches
• Motor Control





Pinout

  Connection Diagram




Specifications

Part Number ZXMN2AM832
Config/
Polarity
2 x N
PD
(W)
1.5
VDSS
(V)
20
VGSS
(+/-)
(V)
12
ID
(A)
3.7
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V 0.3
RDS(on) Max() @ VGS; 2.7V
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.12
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)
0.7
Ciss (typ)
(pF)
310
Qg (typ) (nC)
@ VGS; 4.5V
3.1
Qg (typ) (nC)
@ VGS; 10V


PARAMETER
SYMBOL
N-Channel
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGS
12
V
Continuous Drain Current @VGS=10V; TA=25 (b) (f)
@VGS=10V; TA=70 (b) (f)
@VGS=10V; TA=25 (a) (f)
ID
3.7
3.0
2.9
A
A
A
Pulsed Drain Current
IDM
13
A
Continuous Source Current (Body Diode) (b) (f)
IS
3.0
A
Pulsed Source Current (Body Diode)
ISM
13
A
Power Dissipation at TA=25 (a) (f)
Linear Derating Factor
PD
1.5
12
W
mW/
Power Dissipation at TA=25 (b) (f)
Linear Derating Factor
PD
2.45
19.6
W
mW/
Power Dissipation at TA=25 (c) (f)
Linear Derating Factor
PD
1
8
W
mW/
Power Dissipation at TA=25 (d) (f)
Linear Derating Factor
PD
1.13
9
W
mW/
Power Dissipation at TA=25 (d) (g)
Linear Derating Factor
PD
1.7
13.6
W
mW/
Power Dissipation at TA=25 (e) (g)
Linear Derating Factor
PD
3
24
W
mW/
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150





Description

Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count






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