ZXMN3G32DN8

Features: • Low on-resistance• 4.5V gate drive capability• Fast switching bulletApplication• DC-DC Converters• Power management functions• Motor Control• BacklightingPinoutSpecifications Parameter Symbol IRLR8103V Unit Drain-Source Voltage...

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SeekIC No. : 004552503 Detail

ZXMN3G32DN8: Features: • Low on-resistance• 4.5V gate drive capability• Fast switching bulletApplication• DC-DC Converters• Power management functions• Motor Control• Ba...

floor Price/Ceiling Price

Part Number:
ZXMN3G32DN8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• Low on-resistance
• 4.5V gate drive capability
• Fast switching bullet





Application

• DC-DC Converters
• Power management functions
• Motor Control
• Backlighting





Pinout

  Connection Diagram




Specifications

Parameter
Symbol
IRLR8103V
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous drain current @ VGS=10V; TA=25(b)
@ VGS=10V; TA=70(b)
@ VGS=10V; TA=25(a)
ID
7.1
5.7
5.5
A
A
A
Pulsed drain current(c)
IDM
33.6
A
Continuous source current (body diode)(b)
IS
3.1
A
Pulsed source current (body diode)(c)
ISM
33.6
A
Power dissipation at TA =25(a)(d)
Linear derating factor
PD
1.25
10
W
mW/
Power dissipation at TA =25(a)(e)
Linear derating factor
PD
1.8
14
W
mW/
Power dissipation at TA =25(b)(d)
Linear derating factor
PD
2.1
17
W
mW/
Operating and storage temperature range
TJ, TSTG
-55 to +150





Description

This new generation Trench MOSFET ZXMN3G32DN8 from Zetex features low onresistance and fast switching speed.




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