Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• DPAK packageApplication• DC - DC converters• Audio output stages• Relay and solenoid driving• Motor controlSpecifications Part Number ZXMN4A06K Config...
ZXMN4A06K: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• DPAK packageApplication• DC - DC converters• Audio output stages• ...
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| Part Number | ZXMN4A06K |
| Config/ Polarity |
N |
| PD (W) |
9.5 |
| VDSS (V) |
40 |
| VGSS (+/-) (V) |
20 |
| ID (A) |
10.9 |
| RDS(on) Max () @ VGS; 1.8V | |
| RDS(on) Max () @ VGS; 2.5V | |
| RDS(on) Max () @ VGS; 4.0V | |
| RDS(on) Max () @ VGS; 4.5V | 0.075 |
| RDS(on) Max () @ VGS; 5V | |
| RDS(on) Max () @ VGS; 10.0V | 0.05 |
| VGS(th) (V) |
1 |
| Ciss (typ) (pF) |
810 |
| Qg (typ) (nC) @ VGS; 4.5V |
|
| Qg (typ) (nC) @ VGS; 5V |
|
| Qg (typ) (nC) @ VGS; 10V |
17.1 |
| Parameter | Symbol |
Limit |
Unit |
| Drain-source voltage | VDSS |
40 |
V |
| Gate-source voltage | VGS |
±20 |
V |
| Continuous drain current: VGS=10V; TA=25 (b) VGS=10V; TA=70 (b) VGS=10V; TA=25 (a) |
ID |
10.9 |
A |
| Pulsed drain current (c) | IDM |
35.3 |
A |
| Continuous source current (body diode) (b) |
IS |
10.8 |
A |
| Pulsed source current (body diode) (c) | ISM |
35.3 |
A |
| Power dissipation at TA=25 (a) Linear derating factor |
PD |
4.2 |
W |
| Power dissipation at TA=25 (b) Linear derating factor |
PD |
9.5 |
W |
| Power dissipation at TA=25 (d) Linear derating factor |
PD |
2.15 |
W |
| Operating and storage temperature range | Tj:Tstg |
-55 to +150 |
This new generation of trench MOSFETs ZXMN4A06K from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.