ZXSDS2M832TC

Features: • Extremely Low VF, fast switching Schottky• IF= 1.65A Continuous Forward Current• 3mm x 2mm MLPApplication• DC-DC Converters• DC-DC Modules• Mosfet gate drive circuits• Charging circuits• Mobile Phones• Motor ControlSpecifications ...

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SeekIC No. : 004552580 Detail

ZXSDS2M832TC: Features: • Extremely Low VF, fast switching Schottky• IF= 1.65A Continuous Forward Current• 3mm x 2mm MLPApplication• DC-DC Converters• DC-DC Modules• Mosfet gat...

floor Price/Ceiling Price

Part Number:
ZXSDS2M832TC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

• Extremely Low VF, fast switching Schottky
• IF= 1.65A Continuous Forward Current
• 3mm x 2mm MLP



Application

• DC-DC Converters
• DC-DC Modules
• Mosfet gate drive circuits
• Charging circuits
• Mobile Phones
• Motor Control



Specifications

Parameter Symbol

Rating

Unit

Reverse Voltage VR

60

V

Forward Voltage @ IF = 1000mA VF

600

mV

Forward Current IF

1.65

A

Average Forward Current D=50%, t<=300us

IFAV

1.24

A

Non Repetitive Forward Current t<=100us
Non Repetitive Forward Current t<=10ms
IFSM

16.8
5.63

A
A

Power Dissipation at TA=25 (a)(f)
Linear Derating Factor
PD

1.2
12

W
mW/

Power Dissipation at TA=25 (b)(f)
Linear Derating Factor
PD

2
20

W
mW/

Power Dissipation at TA=25 (c)(f)
Linear Derating Factor
PD

0.8
8

W
mW/

Power Dissipation at TA=25 (d)(f)
Linear Derating Factor
PD

0.9
9

W
mW/

Power Dissipation at TA=25 (d)(g)
Linear Derating Factor
PD

1.36
13.6

W
mW/

Power Dissipation at TA=25 (e)(g)
Linear Derating Factor
PD

2.4
24

W
mW/

Storage Temp, Range Tstg

-55 to+150

Operating & Storage Temp, Range Tj

-55 to+150


NOTES
(a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the center line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is Rth= 250/W giving a power rating of Ptot=400mW.




Description

ZXSDS2M832TC Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent combination provides users with highly efficient performance in applications including DC-DC converters and charging circuits.




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