ZXT11N15DF Selling Leads, Price trend, ZXT11N15DF DataSheet download, circuit diagram from SeekIC.com

Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 5A• IC=3A Continuous Collector Current• SOT23 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Moto...

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SeekIC No. : 004552588 Detail

ZXT11N15DF: Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 5A• IC=3A Continuous Collector Current• SOT23 packageAppli...

ZXT11N15DF Data Sheet

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Part Number:: ZXT11N15DF
Supply Ability:: 5000

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Upload time: 2024/4/24

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Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE ...

Product Details

Description

Features:

• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• h_FE characterised up to 5A
• I_C=3A Continuous Collector Current
• SOT23 package

Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control

Pinout

Connection Diagram

Specifications

PARAMETER	SYMBOL	LIMIT	UNIT
Collector-base voltage	V_CBO	40	V
Collector-emitter voltage	V_CEO	15	V
Emitter-base voltage	V_EBO	7.5	V
Peak Pulse Current	I_CM	5	A
Continuous Collector Current	I_C	3	A
Base Current	I_B	500	mA
Power Dissipation at TA=25°C(a) Linear Derating Factor	P_D	625 5	W mW/
Power Dissipation at TA=25°C(b) Linear Derating Factor	P_D	806 6.4	W mW/
Operating and Storage Temperature Range	T_j:T_stg	-55 to +150

Part Number	ZXT11N15DF
Product Type	NPN
V_CEO(V)	15
I_C (A)	3
I_CM (A)	5
P_D (W)	0.625
h_FE Min	300 200
h_FE Max	900
@ I_C (A)	0.2 3
V_{CE (SAT)} Max (mV)	80 150
@ I_C (A)	1 3
@ I_B (mA)	10 150
f_T Min (MHz)	145
R_{CE (SAT)} (m)	37

Description

This ZXT11N15DF new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.

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