ZXT11N20DFTA

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Frequency : 160 MHz
Maximum DC Collector Current : 2.5 A
Emitter- Base Voltage VEBO : 7.5 V


Features:

• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• h_FE characterised up to 5A
• I_C=2.5A Continuous Collector Current
• SOT23 package


Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control


Pinout




Specifications

PARAMETER	SYMBOL	LIMIT	UNIT
Collector-base voltage	VCBO	40	V
Collector-emitter voltage	VCEO	20	V
Emitter-base voltage	VEBO	7.5	V
Peak Pulse Current	ICM	5	A
Continuous Collector Current	IC	2.5	A
Base Current	IB	500	mA
Power Dissipation at TA=25°C(a) Linear Derating Factor	PD	625 5	W mW/
Power Dissipation at TA=25°C(b) Linear Derating Factor	PD	806 6.4	W mW/
Operating and Storage Temperature Range	Tj:Tstg	-55 to +150

Description

This ZXT11N20DFTA new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.