ZXTDC3M832

Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (100mV @1A--NPN)
• h_FE characterised up to 6A
• I_C=4A Continuous Collector Current
• 3mm x 2mm MLP




Application

• DC - DC Converters
• Charging circuits
• Power switches
• Motor control
• CCFL Backlighting




Pinout






Specifications

Part Number	ZXTDC3M832
Product Type	NPN + PNP
VCEO (V)	50 -40
IC(A)	4 -3
ICM (A)	6 -4
PD (W)	1.5
hFE Min	200 180
hFE Max	-
@I C (A)	1 -1
VCE(SAT) Max (mV)	100 -220
@ IC (A)	1 -1
@ IB (mA)	50 -50
fT Min (MHz)	100 150
RCE (SAT) (m)	68 104

PARAMETER	SYMBOL	NPN	PNP	UNIT
Collector-Base Voltage	VCBO	100	-50	V
Collector-Emitter Voltage	VCEO	50	-40	V
Emitter-Base Voltage	VEBO	7.5	-7.5	V
Peak Pulse Current	ICM	6	-4	A
Continuous Collector Current (a)(f)	IC	4	-3	A
Base Current	IB	1000		mA
Power Dissipation at TA=25°C (a)(f) Linear Derating Factor	PD	1.5 12		W mW/
Power Dissipation at TA=25°C (b)(f) Linear Derating Factor	PD	2.45 19.6		W mW/
Power Dissipation at TA=25°C (c)(f) Linear Derating Factor	PD	1 8		W mW/
Power Dissipation at TA=25°C (d)(f) Linear Derating Factor	PD	1.13 9		W mW/
Power Dissipation at TA=25°C (d)(g) Linear Derating Factor	PD	1.7 13.6		W mW/
Power Dissipation at TA=25°C (e)(g) Linear Derating Factor	PD	3 24		W mW/
Operating and Storage Temperature Range	Tj:Tstg	-55 to +150

Description

Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline ZXTDC3M832, these new4^th generation lowsaturation dual transistors offer extremely lowon state losses making them ideal for use in DC-DC circuits and various driving and power management functions.

Additionally users gain several other key benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power level

PCB area and device placement savings

Lower package height (nom 0.9mm)

Reduced component count ZXTDC3M832