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ZXTN2007Z

Features: • Extemely low equivalent on-resistance; RSAT = 23m at 6.5A• 6 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hFE characteristics up to 20 ampsApplication• DC - DC converters• MOSFET gate drivers̶...

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ZXTN2007Z: Features: • Extemely low equivalent on-resistance; RSAT = 23m at 6.5A• 6 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hF...

ZXTN2007Z Data Sheet

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Part Number:
ZXTN2007Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extemely low equivalent on-resistance; RSAT = 23m at 6.5A
• 6 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 20 amps




Application

• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

Part Number ZXTN2007Z
Product Type NPN
VCEO (V) 30
IC(A) 6
ICM (A) 20
PD (W) 2.1
hFE Min 100
100
hFE Max 300
@I C (A) 1
7
VCE(SAT) Max (mV) 45
190
@ IC (A) 1
6.5
@ IB (mA) 100
300
fT Min (MHz) 140
RCE (SAT) (m) 23


PARAMETER SYMBOL
LIMIT
UNIT
Collector-base voltage VCBO
80
V
Collector-emitter voltage VCEO
30
V
Emitter-base voltage VEBO
7
V
Peak Pulse Current ICM
20
A
Continuous Collector Current(a) IC
6
A
Power Dissipation at TA=25°C(a)
Linear Derating Factor
 PD
1.5
12
W
mW/
Power Dissipation at TA=25°C(b)
Linear Derating Factor
 PD
2.1
16.8
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150





Description

Packaged in the SOT89 outline ZXTN2007Z this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.






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