Features: Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 packageApplication Power MOSFET gate driving Low loss power switchingPinoutSpecifications Parameter Symbol Limit Unit Collector-base voltage VCBO 40 ...
ZXTN2040F: Features: Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 packageApplication Power MOSFET gate driving Low loss power switchingPinoutSpecificat...
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Parameter |
Symbol |
Limit |
Unit |
Collector-base voltage |
VCBO |
40 |
V |
Collector-emitter voltage |
VCEO |
40 |
V |
Emitter-base voltage |
VEBO |
5.0 |
V |
Peak pulse current |
ICM |
2 |
A |
Continuous collector current * |
IC |
1 |
A |
Peak base current |
IBM |
1 |
A |
Power dissipation @ TA=25* |
PD |
350 |
mW |
Operating and storage temperature |
Tj:Tstg |
-55 to +150 |
Part Number | ZXTN2040F |
Product Type | NPN |
VCEO (V) | 40 |
IC(A) | 1 |
ICM (A) | 2 |
PD (W) | 0.35 |
hFE Min | 300 200 |
hFE Max | 900 |
@I C (A) | 0.5 1 |
VCE(SAT) Max (mV) | 300 500 |
@ IC (A) | 0.5 1 |
@ IB (mA) | 50 100 |
fT Min (MHz) | 150 |
RCE (SAT) (m) | - |
This transistor combines high gain ZXTN2040F, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.