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ZXTN2040F

Features: Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 packageApplication Power MOSFET gate driving Low loss power switchingPinoutSpecifications Parameter Symbol Limit Unit Collector-base voltage VCBO 40 ...

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SeekIC No. : 004552663 Detail

ZXTN2040F: Features: Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 packageApplication Power MOSFET gate driving Low loss power switchingPinoutSpecificat...

ZXTN2040F Data Sheet

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Part Number:
ZXTN2040F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Description



Features:

Low saturation voltage for reduced power dissipation
1 to 2 amp high current capability
Pb-free
SOT23 package




Application

Power MOSFET gate driving
Low loss power switching




Pinout

Connection Diagram




Specifications

Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5.0
V
Peak pulse current
ICM
2
A
Continuous collector current *
IC
1
A
Peak base current
IBM
1
A
Power dissipation @ TA=25*
PD
350
mW
Operating and storage temperature
Tj:Tstg
-55 to +150

NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.


Part Number ZXTN2040F
Product Type NPN
VCEO (V) 40
IC(A) 1
ICM (A) 2
PD (W) 0.35
hFE Min 300
200
hFE Max 900
@I C (A) 0.5
1
VCE(SAT) Max (mV) 300
500
@ IC (A) 0.5
1
@ IB (mA) 50
100
fT Min (MHz) 150
RCE (SAT) (m) -





Description

This transistor combines high gain ZXTN2040F, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.






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