Features: • High power dissipation SOT23 package• High peak current• Very high gain• Low saturation voltage• 6V reverse blocking voltageApplication• MOSFET gate drivers• Power switches• Motor control• DC fans• DC-DC convertersPinoutSpecif...
ZXTN25012EFH: Features: • High power dissipation SOT23 package• High peak current• Very high gain• Low saturation voltage• 6V reverse blocking voltageApplication• MOSFET gate d...
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Part Number | ZXTN25012EFH |
Product Type | NPN |
VCEO(V) | 12 |
IC (A) | 6 |
ICM (A) | 15 |
PD (W) | 1.25 |
hFE Min | 500 300 |
hFE Max | 1500 |
@ IC (A) | 0.01 4 |
VCE (SAT) Max (mV) | 32 190 |
@ IC (A) | 1 6 |
@ IB (mA) | 100 120 |
fT Min (MHz) | 260 |
RCE (SAT) (m) | 23 |
Parameter |
Symbol |
Limit |
Unit |
Collector-base voltage |
VCBO |
20 |
V |
Collector-emitter voltage |
VCEO |
12 |
V |
Collector-emitter voltage |
VECO |
4.5 |
V |
Emitter-collector voltage (reverse blocking) |
VEBO |
7 |
V |
Continuous Collector current(c) |
IC |
6 |
A |
Base current |
IB |
1 |
A |
Peak pulse current |
ICM |
15 |
A |
Power dissipation at Tamb =25(a) Linear derating factor |
PD |
0.73 5.84 |
W mW/ |
Power dissipation at Tamb =25(b) Linear derating factor |
PD |
1.05 8.4 |
W mW/ |
Power dissipation at Tamb =25(c) Linear derating factor |
PD |
1.25 9.6 |
W mW/ |
Power dissipation at Tamb =25(d) Linear derating factor |
PD |
1.81 14.5 |
W mW/ |
Operating and storage temperature range |
Tj, Tstg |
-55 to 150 |
Advanced process capability and package design ZXTN25012EFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.