ZXTP19020CFF

Features: • High gain• Low saturation voltage• Low profile high dissipation packageApplication• Battery charging• Load switch• DC-DC convertersPinoutSpecifications Part Number ZXTP19020CFF Product Type PNP VCEO(V) -20 IC (A) -5 ICM (A) ...

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SeekIC No. : 004552693 Detail

ZXTP19020CFF: Features: • High gain• Low saturation voltage• Low profile high dissipation packageApplication• Battery charging• Load switch• DC-DC convertersPinoutSpecification...

floor Price/Ceiling Price

Part Number:
ZXTP19020CFF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• High gain
• Low saturation voltage
• Low profile high dissipation package





Application

• Battery charging
• Load switch
• DC-DC converters





Pinout

  Connection Diagram




Specifications

Part Number ZXTP19020CFF
Product Type PNP
VCEO(V) -20
IC (A) -5
ICM (A) -10
PD (W) 1.5
hFE Min 200
110
hFE Max 500
@ IC (A) -0.1
-5
VCE (SAT) Max (mV) -70
-120
@ IC (A) -1
-2
@ IB (mA) -20
-40
fT Min (MHz) 200
RCE (SAT) (m) 21


Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage
VCEO
-20
V
Emitter-collector voltage (reverse blocking)
VECO
-5
V
Emitter-base voltage
VEBO
-7
V
Continuous collector current(c)
IC
-5
A
Base current
IB
-1
A
Peak pulse current
ICM
-10
A
Power dissipation at Tamb =25(a)
Linear derating factor
PD
0.84
6.72
W
mW/
Power dissipation at Tamb =25(b)
Linear derating factor
PD
1.34
10.72
W
mW/
Power dissipation at Tamb =25(c)
Linear derating factor
PD
1.5
12.0
W
mW/
Power dissipation at Tamb =25(d)
Linear derating factor
PD
2.0
16.0
W
mW/
Operating and storage temperature range
Tj, Tstg
-55 to 150





Description

Advanced process capability of the ZXTP19020CFF has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.






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