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ZXTP2039F

Features: Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 packageApplication Power MOSFET gate driving Low loss power switchingSpecifications Parameter Symbol Limit Unit Collector-base voltage VCBO -80 V Collector-emitter volt...

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SeekIC No. : 004552716 Detail

ZXTP2039F: Features: Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 packageApplication Power MOSFET gate driving Low loss power switchingSpecifications ...

ZXTP2039F Data Sheet

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Part Number:
ZXTP2039F
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low saturation voltage for reduced power dissipation
1 to 2 amp high current capability
Pb-free
SOT23 package




Application

Power MOSFET gate driving
Low loss power switching




Specifications

Parameter Symbol Limit Unit
Collector-base voltage VCBO -80 V
Collector-emitter voltage VCEV -80 V
Collector-emitter voltage VCEO -60 V
Emitter-base voltage VEBO -5.0 V
Peak pulse current ICM -2 A
Continuous collector current* IC -1 A
Peak base current IBM -1 A
Power dissipation @ TA=25°C* PD 350 mW
Operating and storage temperature Tj:Tstg -55 to +150
NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions

Part Number ZXTP2039F
Product Type PNP
VCEO (V) -60
IC (A) -1
ICM (A) -2
PD (W) 0.35
hFE Min 100
80
hFE Max 300
@ IC (A) -0.5
-1
VCE (SAT) Max (mV) -200
-300
@ IC (A) -0.1
-0.5
@ IB (mA) -2
-50
fT Min (MHz) 150
RCE (SAT) (m) -





Description

This transistor combines high gain of the ZXTP2039F, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.






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