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ZXTP25100CFH

Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 7V reverse blocking voltageApplication• MOSFET and IGBT gate driving• DC - DC converters• Motor drive• High side driver• Load disconnect switchSpecific...

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SeekIC No. : 004552734 Detail

ZXTP25100CFH: Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 7V reverse blocking voltageApplication• MOSFET and IGBT gate driving•...

ZXTP25100CFH Data Sheet

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Part Number:
ZXTP25100CFH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 7V reverse blocking voltage




Application

• MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• High side driver
• Load disconnect switch




Specifications

SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage -115 V
VCEO Collector to emitter voltage -100 V
VCEO Emitter-collector voltage (reverse blocking) -7 V
VEBO Emitter to base voltage -7 V
IC Continuous collector current(c) -1 A
ICM Peak pulse current -3 A
IB Base current -500 A
PD Power dissipation at Tamb =25(a)
Linear derating factor		 0.73
5.84		 W
mW/
PD Power dissipation at Tamb =25(b)
Linear derating factor		 1.05
8.4		 W
mW/
PD Power dissipation at Tamb =25(c)
Linear derating factor		 1.25
9.6		 W
mW/
PD Power dissipation at Tamb =25(d)
Linear derating factor		 1.81
14.5
W
mW/
Tj Junction temperature 150
Tstg Storage temperaturerange -55 to +150





Description

Advanced process capability and package design of the ZXTP25100CFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.






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