Features: ·Adoption of FBET process.·High breakdown voltage : VCEO=50V.·Large current capacitiy and high fT.·Ultrasmall-sized package permitting sets·to be smallsized, slim.Pinout Specifications Parameter Symbol Rating UNIT Collector-base voltage VCBO 60 V Collector-emitter vo...
2SC3392: Features: ·Adoption of FBET process.·High breakdown voltage : VCEO=50V.·Large current capacitiy and high fT.·Ultrasmall-sized package permitting sets·to be smallsized, slim.Pinout Specifications ...
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| Parameter | Symbol | Rating | UNIT | |
| Collector-base voltage | VCBO | 60 | V | |
| Collector-emitter voltage | VCEO | 50 | V | |
| Emitter-base voltage | VEBO | 5 | V | |
| Collector current | IC | 500 | mA | |
| Collector current (pulse) | ICP | 800 | mA | |
| Collector dissipation | PC | 200 | mW | |
| Jumction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 0.5 |
| PC [W] | 0.2 |
| Electrical characteristics | |
|---|---|
| hFE min | 100 |
| hFE max | 560 |
| VCE [V] | 5 |
| IC [mA] | 10 |
| VCE (sat) max [V] | 0.3 |
| IC [mA] | 100 |
| IB [mA] | 10 |
| ton *tr [ns] | 70 |
| tstg typ [ns] | 400 |
| tf *toff [ns] | 70 |