Transistors Bipolar (BJT) HIGH-CURRENT SWITCHING
2SC5888: Transistors Bipolar (BJT) HIGH-CURRENT SWITCHING
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| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-to-Base Voltage |
VCBO |
(--50)60 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
(--)50 |
V | |
| Emitter-to-Base Voltage |
VEBO |
(--)6 |
V | |
| Collector Current |
IC |
(--)10 |
A | |
| Collector Current (Pulse) |
ICP |
(--)13 |
A | |
| Base Current |
IB |
(--)2 |
A | |
| Collector Dissipation |
PC |
2 |
W | |
| Tc=25°C |
25 |
W | ||
| Junction Temperature |
Tj |
150 |
°C | |
| Storage Temperature |
Tstg |
--55 to +150 |
°C |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 10 |
| PC Tc=25°C [W] | 25 |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 700 |
| VCE [V] | 2 |
| IC [A] | 1 |
| VCE (sat) max [V] | 0.36 |
| IC [A] | 5 |
| IB [A] | 0.25 |
| fT typ [MHz] | 200 |