Features: • Low on-resistance RDS (on) = 7.0 m typ.• Low drive currentSpecifications Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 45 A Drain peak current ID (pulse) Note 1 180 A Body-drain...
H7N0311LM: Features: • Low on-resistance RDS (on) = 7.0 m typ.• Low drive currentSpecifications Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGS...
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| Item | Symbol | Value | Unit |
| Drain to source voltage | VDSS | 30 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 45 | A |
| Drain peak current | ID (pulse) Note 1 | 180 | A |
| Body-drain diode reverse drain current | IDR | 45 | A |
| Channel to case thermal impedance | ch-c | 2.08 | °C/W |
| Channel dissipation | Pch Note 2 | 60 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |