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IRFU420A

MOSFET N-Chan 500V 3.3 Amp

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SeekIC No. : 00158920 Detail

IRFU420A: MOSFET N-Chan 500V 3.3 Amp

IRFU420A Data Sheet

floor Price/Ceiling Price

US $ .93~.97 / Piece | Get Latest Price
Part Number:
IRFU420A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~2260
  • 2260~3000
  • 3000~6000
  • Unit Price
  • $.97
  • $.94
  • $.93
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 3 Ohms
Continuous Drain Current : 3.3 A


Features:

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free Available


Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching


Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current VGS at 10 V TC = 25 °C ID 3.3 A
TC = 100 °C 2.1
Pulsed Drain Currenta IDM 10
Linear Derating Factor   0.67 W/°C
Single Pulse Avalanche Energyb EAS 140 mJ
Repetitive Avalanche Currenta IAR 2.5 A
Repetitive Avalanche Energya EAR 5.0 mJ
Maximum Power Dissipation TC = 25 °C PD 83 W
Peak Diode Recovery dV/dtc dV/dt 3.4 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s   300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 45 mH, RG = 25 , IAS = 2.5 A (see fig. 12).
c. ISD 2.5 A, dI/dt 270 A/s, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.


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