MPSA29

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 0.1 uA
Package / Case : TO-92
Emitter- Base Voltage VEBO : 12 V
Maximum DC Collector Current : 0.8 A


Features:

• Pb−Free Packages are Available


Specifications

Rating	Symbol	Value	Unit
Collector−Emitter Voltage MPSA28 MPSA29	VCEO	80 100	Vdc
Collector−Base Voltage MPSA28 MPSA29	VCBO	80 100	Vdc
Emitter −Base Voltage	VEBO	12	Vdc
Collector Current − Continuous	IC	500	mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	625 5.0	W mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	1.5 12	W mW/°C
Storage Temperature Range	Tstg	−55 to +150	°C

 

 

 

Parameters:

Technical/Catalog Information	MPSA29
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	800mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 10mA, 10mA
Frequency - Transition	125MHz
Current - Collector Cutoff (Max)	500nA
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPSA29 MPSA29