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SiHFZ10

Features: • Dynamic dv/dt Rating• 175 Operating Temperature• Fast Switching• Ease of Paralleling• Simple Drive Requirements• Lead (Pb)-free AvailableSpecifications Parameter Symbol Limit Unit Gate-Source Voltage VGS ±20 V Drain...

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SiHFZ10: Features: • Dynamic dv/dt Rating• 175 Operating Temperature• Fast Switching• Ease of Paralleling• Simple Drive Requirements• Lead (Pb)-free AvailableSpecificatio...

SiHFZ10 Data Sheet

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Part Number:
SiHFZ10
Supply Ability:
5000

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Product Details

Description



Features:

• Dynamic dv/dt Rating
• 175 Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available


Specifications

Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous VGS at 10 V TC=25
ID
10
7.2
A
TC=100
Pulsed Drain Currenta
IDM
40
A
Linear Derating Factor
0.29
W/
Single Pulse Avalanche Energyb
EAS
47
mJ
Maximum Power Dissipation TC=25
PD
43
W
Peak Diode Recovery dV/dtc
dV/dt
4.5
V/ns
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 175
Soldering Recommendations (Peak Temperature) for 10 s
300d
Mounting Torque 6-32 or M3 screw
10
 lbf ` in
N ` m
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 , L = 1.8 mH, RG = 25 , IAS = 7.2 A (see fig. 12).
c. ISD 10 A, dI/dt 90 A/s, VDD VDS, TJ 175 .
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply


Description

Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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