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VB20120S

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package...

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SeekIC No. : 004540597 Detail

VB20120S: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C...

VB20120S Data Sheet

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Part Number:
VB20120S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.




Specifications

PARAMETER SYMBOL V20120S VF20120S VB20120S VI20120S UNIT
Maximum repetitive peak reverse voltage VRRM 120 V
Maximum average forward rectified current
(Fig. 1)		 IF(AV) 20 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load		 IFSM 200 A
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min		 VAC 1500 V
Operating junction and storage temperature range TJ, TSTG - 40 to + 150



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