Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: - 30 V
Continuous Drain Current
: 1.5 A
Package / Case
: SuperSOT
Resistance Drain-Source RDS (on)
: 0.125 Ohms
Features: -1.5 A, -30 V, R DS(ON) = 0.125 @ VGS = -10 V
R DS(ON) = 0.20 @ VGS= - 4.5 V.
High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability.
High density cell design for extremely low R DS(ON)
Exceptional on-resistance and maximum DC current capability. Specifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
-30 |
V |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
-1.5 |
A |
|
-5 |
|
PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b) |
0.5 |
W |
|
0.46 |
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
|
DescriptionSuperSOT
TM -3 P-Channel logic level enhancement mode power field effect transistors FDN358P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices FDN358P are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Parameters: | Technical/Catalog Information | FDN358P |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 1.5A |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 182pF @ 15V |
| Power - Max | 460mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 5.6nC @ 10V |
| Package / Case | SSOT-3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDN358P
FDN358P
FDN358PDKR ND
FDN358PDKRND
FDN358PDKR
|
FDN358P Data Sheet
