bq4013MA -85

The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.

The control circuitry constantly of bq4013MA -85 monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent inadvertent write operation.

At this time the integral energy source of bq4013MA -85 is switched on to sustain the memory until after VCC returns valid. The bq4013/Y uses an extremely low standby current CMOS SRAM, coupled with a small lithium coin cell to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

The bq4013/Y requires no external circuitry and is socket-compatible with industry-standard SRAMs and most EPROMs and EEPROMs.